Lam Research 2300 STRIP 45 — Overview

The 2300 STRIP 45 is a plasma resist-strip and ash chamber designed for the Lam 2300 cluster platform by Lam Research. It is widely used in 200 mm and 300 mm semiconductor fabs for photoresist removal, post-etch cleaning, and post-implant strip processes.

This page provides a clear technical overview suitable for product listings, industrial catalogs, and semiconductor equipment marketplaces.

Product Overview

The Lam Research 2300 STRIP 45 chamber is part of the proven Lam 2300 platform used in high-volume semiconductor manufacturing. It performs critical dry strip and plasma ashing processes after etching and ion implantation.

Primary Functions

• Photoresist removal (PR strip)
• Plasma ashing
• Post-etch residue cleaning
• Post-implant resist removal
• Organic and polymer residue elimination

These processes ensure wafer surfaces are clean and ready for the next fabrication step while minimizing material damage.

Lam 2300 Platform Background

The Lam 2300 series is a long-established plasma processing platform designed for:

• High-volume manufacturing (HVM)
• 200 mm and 300 mm wafer support
• Flexible chamber integration
• Mature technology nodes (130 nm → 65 nm and below)

Typical cluster configurations include:

• Metal and dielectric etch chambers
• Pre-clean and descum modules
• Strip and ash chambers (Strip45)
• Vacuum transfer and load-lock modules

The Strip 45 chamber operates within a vacuum cluster tool, reducing contamination and improving yield.

Key Capabilities of the STRIP 45 Chamber

1. Photoresist Removal

The chamber uses downstream plasma technology to remove:

• Standard photoresist
• Hard mask residues
• Organic contamination

This low-damage approach protects delicate wafer structures and maintains critical dimension (CD) control.

2. Post-Etch Residue Cleaning

After plasma etching, wafers often contain:

• Fluorocarbon polymers
• Etch by-products
• Metallic contamination

The STRIP 45 performs in-vacuum cleaning to prevent oxidation and corrosion, improving device reliability.

3. Post-Implant Resist Strip

Ion implantation can harden and carbonize photoresist, making removal difficult.
The STRIP 45 chamber provides:

• Efficient resist removal
• Low silicon damage
• Excellent surface preparation for subsequent processing

Core Technology

Downstream Plasma (Remote Plasma Source)

Key benefits:

• Minimal ion bombardment
• Low temperature processing
• High selectivity to underlying materials
• Reduced substrate damage

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